产品中心

产品中心

HTH9G07P1K0H

RF Power LDMOS Transistor
High Ruggedness N-Channel
Enhancement–Mode Lateral MOSFET
The HTH9G07P1K0H is high ruggedness device designed for use in high VSWR ISM, Broadcast and Mobile Radio applications.Their unmatched Input/Output design supports frequency use from 470 to 700 MHz.

分类: 品牌:

描述


·Saturated output power 1000W
·Operating Drain Voltage:+50V
·Device can be used on a single-ended or in a push-pullconfiguration.Doherty application applicable
·Integrated ESD protection
·Excellent thermal stability due to low thermal resistancepackage
·Enhanced robustness design without device degradation
·Included in WATECH product longevity program withassured supply for a minimum of 15 years
Applications
·Industrial Scientific Medical (ISM)
·Laser generationo Plasma generationo Particle acceleratorso MRI,RF ablation and skin treatmento Industrial heating,welding and drying systems
· Radio and VHF TV broadcast

 

评价

目前还没有评价

成为第一个“HTH9G07P1K0H” 的评价者

您的邮箱地址不会被公开。 必填项已用 * 标注